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Atomica offers Cu via wafers as starting materials on 6” and 8” for standalone interposer applications:

  • Wafers consist of back-filled plated Cu vias with top passivation layer
  • Wafers are ready for custom redistribution layers, pad metals, and interlayer dielectric

Lead time:

6-10 weeks

(pending customization, quantity)

Via dimensions

Diameter:

<60µm

Minimum via pitch:

3x

diameter

Depth

200-250µm

Via density per wafer

<5%

fill factor

Custom Post-Via Processing

Wafers are ready for customer’s specific design

Processes consist of the following:

  • Top metallization, RDLs, and ILDs
  • Backside polishing
  • Backside passivation, metallization

Our Process Flow

01.
Via Etch
Via pattern, DRIE etch
Dielectric deposition
02.
Cu Fill
Seed metal deposition
Electroplate Cu to fill vias
03.
CMP and Top Passivation
CMP Cu
Passivation deposition
Step Image